Title :
Universality of Off-State Degradation in Drain Extended NMOS Transistors
Author :
Varghese, D. ; Kufluoglu, H. ; Reddy, V. ; Shichijo, H. ; Krishnan, S. ; Alam, M.A.
Author_Institution :
Purdue Univ., West Lafayette, IN
Abstract :
Off-state degradation in drain extended NMOS transistors is studied. It is shown that the damage is primarily due to Si-O bonds broken by hot carriers. These hot carriers are generated through impact ionization of surface band-to-band tunneling (BTBT) current. The resultant degradation is found to be universal, enabling reliability projections at lower stress voltages and based on shorter duration tests, than previously anticipated
Keywords :
MOSFET; hot carriers; impact ionisation; reliability; tunnelling; drain extended NMOS transistors; hot carriers; impact ionization; off-state degradation; reliability projections; surface band-to-band tunneling current; Degradation; Hot carriers; Human computer interaction; Impact ionization; Instruments; MOSFETs; Stress; Testing; Tunneling; Voltage;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346895
