• DocumentCode
    2388932
  • Title

    Substrate injection induced ultrafast degradation in HfO2/TaN/TiN gate stack MOSFET

  • Author

    Ranjan, R. ; Pey, KL ; Tung, CH ; Ang, DS ; Tang, LJ ; Kauerauf, T. ; Degraeve, R. ; Groeseneken, G. ; Gendt, S. De ; Bera, LK

  • Author_Institution
    Sch. of Electr. & Electron. Eng., NTU, Singapore
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    HfO2high-K/TaN/TiN gate stacks n/p-MOSFETs have been studied. Ultrafast progressive breakdown (PBD) is polarity dependent and is found only in the case of substrate injection in metal gate n/p-MOSFETs. PBD transient of metal gate p-MOSFET is much slower than n-MOSFET in inversion mode stress
  • Keywords
    MOSFET; electric breakdown; hafnium compounds; tantalum compounds; titanium compounds; HfO2-TaN-TiN; gate stack MOSFET; substrate injection; ultrafast degradation; ultrafast progressive breakdown; Degradation; Electric breakdown; Gate leakage; Hafnium oxide; Leakage current; MOSFET circuits; Microelectronics; Stress; Tin; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0439-8
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346897
  • Filename
    4154316
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2388932