DocumentCode :
2388932
Title :
Substrate injection induced ultrafast degradation in HfO2/TaN/TiN gate stack MOSFET
Author :
Ranjan, R. ; Pey, KL ; Tung, CH ; Ang, DS ; Tang, LJ ; Kauerauf, T. ; Degraeve, R. ; Groeseneken, G. ; Gendt, S. De ; Bera, LK
Author_Institution :
Sch. of Electr. & Electron. Eng., NTU, Singapore
fYear :
2006
fDate :
11-13 Dec. 2006
Firstpage :
1
Lastpage :
4
Abstract :
HfO2high-K/TaN/TiN gate stacks n/p-MOSFETs have been studied. Ultrafast progressive breakdown (PBD) is polarity dependent and is found only in the case of substrate injection in metal gate n/p-MOSFETs. PBD transient of metal gate p-MOSFET is much slower than n-MOSFET in inversion mode stress
Keywords :
MOSFET; electric breakdown; hafnium compounds; tantalum compounds; titanium compounds; HfO2-TaN-TiN; gate stack MOSFET; substrate injection; ultrafast degradation; ultrafast progressive breakdown; Degradation; Electric breakdown; Gate leakage; Hafnium oxide; Leakage current; MOSFET circuits; Microelectronics; Stress; Tin; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
Type :
conf
DOI :
10.1109/IEDM.2006.346897
Filename :
4154316
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2388932
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