DocumentCode
2388952
Title
Frequency Dependent Charge-Pumping, How deep does it probe?
Author
Wang, Y. ; Lee, V. ; Cheung, K.P.
Author_Institution
Dept. of ECE, Rutgers Univ., New Brunswick, NJ
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
Frequency dependent charge pumping measurement has become an important tool for high-k dielectric reliability investigation. The interpretation of how deep the technique probes has become a controversy with important implication on the reliability of the high-k gate dielectric. The paper examines this problem experimentally and theoretically in this paper. Charge pumping experiment has been carried out to beyond 1GHz for the first time, providing evidence that neither of the existing models is correct. The paper proposes a new theoretical model that is consistent with the new data
Keywords
high-k dielectric thin films; reliability; frequency dependent charge-pumping; high-k gate dielectric; reliability; Charge pumps; Current measurement; Dielectric measurements; Electron traps; Frequency dependence; High K dielectric materials; High-K gate dielectrics; Probes; Stress; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0439-8
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346898
Filename
4154317
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