• DocumentCode
    2388952
  • Title

    Frequency Dependent Charge-Pumping, How deep does it probe?

  • Author

    Wang, Y. ; Lee, V. ; Cheung, K.P.

  • Author_Institution
    Dept. of ECE, Rutgers Univ., New Brunswick, NJ
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Frequency dependent charge pumping measurement has become an important tool for high-k dielectric reliability investigation. The interpretation of how deep the technique probes has become a controversy with important implication on the reliability of the high-k gate dielectric. The paper examines this problem experimentally and theoretically in this paper. Charge pumping experiment has been carried out to beyond 1GHz for the first time, providing evidence that neither of the existing models is correct. The paper proposes a new theoretical model that is consistent with the new data
  • Keywords
    high-k dielectric thin films; reliability; frequency dependent charge-pumping; high-k gate dielectric; reliability; Charge pumps; Current measurement; Dielectric measurements; Electron traps; Frequency dependence; High K dielectric materials; High-K gate dielectrics; Probes; Stress; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0439-8
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346898
  • Filename
    4154317