Title :
A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory
Author :
Lai, Erh-Kun ; Lue, Hang-Ting ; Hsiao, Yi-Hsuan ; Hsieh, Jung-Yu ; Lu, Chi-Pin ; Wang, Szu-Yu ; Yang, Ling-Wu ; Yang, Tahone ; Chen, Kuang-Chao ; Gong, Jeng ; Hsieh, Kuang-Yeu ; Liu, Rich ; Lu, Chih-Yuan
Author_Institution :
Macronix Int. Co. Ltd., Hsinchu
Abstract :
A double-layer TFT NAND-type flash memory is demonstrated, ushering into the era of three-dimensional (3D) flash memory. A TFT device using bandgap engineered SONOS (BE-SONOS) (Lue et al., 2005, Lai et al., 2006) with fully-depleted (FD) poly silicon (60 nm) channel and tri-gate P+-poly gate is integrated into a NAND array. Small devices (L/W=0.2/0.09 mum) with excellent performance and reliability properties are achieved. The bottom layer shows no sign of reliability degradation compared to the top layer, indicating the potential for further multi-layer stacking. The present work illustrates the feasibility of 3D flash memory
Keywords :
NAND circuits; flash memories; reliability; silicon; stacking; thin film transistors; 3D flash memory; NAND array; NAND-type flash memory; bandgap engineered SONOS; fully-depleted poly silicon; multilayer stackable thin-film transistor; multilayer stacking; reliability degradation; tri-gate P+-poly gate; Etching; Fabrication; Flash memory; Photonic band gap; Rapid thermal processing; Silicon; Stacking; Thin film transistors; Transconductance; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346903
