Author :
Oh, J.H. ; Park, Jae Hyo ; Lim, Y.S. ; Lim, H.S. ; Oh, Y.T. ; Kim, Jong Soo ; Shin, J.M. ; Song, Young Jun ; Ryoo, K.C. ; Lim, D.W. ; Park, S.S. ; Kim, Jong In ; Kim, Ji H. ; Yu, Jinpeng ; Yeung, Frankie ; Jeong, C.W. ; Kong, J.H. ; Kang, D.H. ; Koh, G.H.
Abstract :
Fully functional 512Mb PRAM with 0.047mum2 (5.8F2) cell size was successfully fabricated using 90nm diode technology in which the authors developed novel process schemes such as vertical diode as cell switch, self-aligned bottom electrode contact scheme, and line-type Ge2Sb2Te5. The 512Mb PRAM showed excellent electrical properties of sufficiently large on-current and stable phase transition behavior. The reliability of the 512Mb chip was also evaluated as a write-endurance over 1E5 cycles and a data retention time over 10 years at 85degC
Keywords :
antimony compounds; diodes; germanium compounds; integrated circuit reliability; nanotechnology; random-access storage; 512 Mbit; 85 C; 90 nm; Ge2Sb2Te5; full integration; highly manufacturable PRAM; nanotechnology; reliability; self-aligned bottom electrode contact; vertical diode; Contact resistance; Electrodes; Etching; MOSFET circuits; Manufacturing; Phase change random access memory; Semiconductor diodes; Switches; Switching circuits; Voltage;
