Title :
Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories
Author :
Matsui, Y. ; Kurotsuchi, K. ; Tonomura, O. ; Morikawa, T. ; Kinoshita, M. ; Fujisaki, Y. ; Matsuzaki, N. ; Hanzawa, S. ; Terao, M. ; Takaura, N. ; Moriya, H. ; Iwasaki, T. ; Moniwa, M. ; Koga, T.
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Tokyo
Abstract :
A novel memory cell for phase-change memories (PCMs) that enables low-power operation has been developed. Power (i.e., current and voltage) for the cell is significantly reduced by inserting a very thin Ta2O5 film between GeSbTe (GST) and a W plug. The Ta2O5 interfacial layer works not only as a heat insulator enabling effective heat generation in GST but also as an adhesion layer between GST and SiO2 underneath. Nonetheless, sufficient current flows through the interfacial layer due to direct tunneling. A low programming power of 1.5 V/100 muA can therefore be obtained even on a W plug with a diameter of 180 nm fabricated using standard 0.13-mum CMOS technology. In addition, the uniformity and repeatability of cell resistance are excellent because of the inherently stable Ta2O5 film properties
Keywords :
CMOS memory circuits; antimony compounds; germanium compounds; low-power electronics; phase change materials; silicon compounds; tantalum compounds; tunnelling; 0.13 micron; CMOS technology; GeSbTe; SiO2; Ta2O5; W plug; direct tunneling; interfacial layer; low power operation; memory cell; phase change memories; thin film; Adhesives; CMOS technology; Crystalline materials; Electrodes; Fabrication; Insulation; Phase change materials; Phase change memory; Plugs; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346908
