Author :
Chen, Y.C. ; Rettner, C.T. ; Raoux, S. ; Burr, G.W. ; Chen, S.-H. ; Shelby, R.M. ; Salinga, M. ; Risk, W.P. ; Happ, T.D. ; McClelland, G.M. ; Breitwisch, M. ; Schrott, A. ; Philipp, J.B. ; Lee, M.H. ; Cheek, R. ; Nirschl, T. ; Lamorey, M. ; Chen, C.F. ; J
Author_Institution :
IBM Almaden Res. Center, Macronix Int. Co. Ltd., San Jose, CA
Abstract :
An ultra-thin phase-change bridge (PCB) memory cell, implemented with doped GeSb, is shown with < 100muA RESET current. The device concept provides for simplified scaling to small cross-sectional area (60nm2) through ultra-thin (3nm) films; the doped GeSb phase-change material offers the potential for both fast crystallization and good data retention
Keywords :
germanium compounds; integrated memory circuits; phase change materials; thin films; 3 nm; GeSb; PCB memory cell; RESET current; phase-change bridge memory device; phase-change material; ultra-thin films; Bridge circuits; Crystalline materials; Electrodes; Lungs; Phase change materials; Phase change memory; Phase change random access memory; Resists; Testing; Tin;
