• DocumentCode
    2389163
  • Title

    Ultra-Thin Phase-Change Bridge Memory Device Using GeSb

  • Author

    Chen, Y.C. ; Rettner, C.T. ; Raoux, S. ; Burr, G.W. ; Chen, S.-H. ; Shelby, R.M. ; Salinga, M. ; Risk, W.P. ; Happ, T.D. ; McClelland, G.M. ; Breitwisch, M. ; Schrott, A. ; Philipp, J.B. ; Lee, M.H. ; Cheek, R. ; Nirschl, T. ; Lamorey, M. ; Chen, C.F. ; J

  • Author_Institution
    IBM Almaden Res. Center, Macronix Int. Co. Ltd., San Jose, CA
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    An ultra-thin phase-change bridge (PCB) memory cell, implemented with doped GeSb, is shown with < 100muA RESET current. The device concept provides for simplified scaling to small cross-sectional area (60nm2) through ultra-thin (3nm) films; the doped GeSb phase-change material offers the potential for both fast crystallization and good data retention
  • Keywords
    germanium compounds; integrated memory circuits; phase change materials; thin films; 3 nm; GeSb; PCB memory cell; RESET current; phase-change bridge memory device; phase-change material; ultra-thin films; Bridge circuits; Crystalline materials; Electrodes; Lungs; Phase change materials; Phase change memory; Phase change random access memory; Resists; Testing; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0438-X
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346910
  • Filename
    4154329
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2389163