• DocumentCode
    2389224
  • Title

    Nonvolatile SRAM Cell

  • Author

    Wang, Wei ; Gibby, Aaron ; Wang, Zheng ; Chen, Tze Wee ; Fujita, Shinobu ; Griffin, Peter ; Nishi, Yoshio ; Wong, Simon

  • Author_Institution
    Center for Integrated Syst., Stanford Univ., CA
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A nonvolatile SRAM cell with two back-up nonvolatile memory devices is proposed. This novel cell offers nonvolatile storage, thus allowing selected blocks of SRAM to be powered down during operation. There is no area penalty. A slight performance penalty is anticipated
  • Keywords
    SRAM chips; nonvolatile SRAM cell; nonvolatile memory devices; nonvolatile storage; Electrodes; Laboratories; Leakage current; Logic devices; MOSFETs; Nonvolatile memory; Radio frequency; Random access memory; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0439-8
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346730
  • Filename
    4154331
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2389224