Erase mechanism for copper oxide resistive switching memory cells with nickel electrode

Author

Tzu-Ning Fang ; Kaza, S. ; Haddad, S. ; An Chen ; Yi-Ching Wu ; Zhida Lan ; Avanzino, S. ; Dongxiang Liao ; Gopalan, C. ; Seungmoo Choi ; Mahdavi, S. ; Buynoski, M. ; Lin, Y. ; Marrian, C. ; Bill, C. ; VanBuskirk, M. ; Taguchi, M.

Author_Institution

Adv. Memory Dev. Group, Spansion Inc., Sunnyvale, CA

fYear

2006

fDate

11-13 Dec. 2006

Abstract

A metal-insulator-metal (MIM) device based on a Cu₂O insulator has electrical characteristics significantly dependent on the oxide to top electrode (TE) interface. Cu/Cu₂O/TE devices with various top electrodes have different thermal release characteristics, related to trap depth. The behavior of the device during erase with Ni and Ti top electrodes suggests different mechanisms. This paper focuses on Cu/Cu₂O/Ni devices and proposes a thermal erase model, based on power calculations and temperature dependence

Keywords

MIM devices; copper; copper compounds; electrodes; nickel; thermal insulating materials; Cu-Cu₂O-Ni; copper oxide resistive switching memory cells; erase mechanism; metal-insulator-metal device; nickel electrode; top electrode interface; Communication switching; Copper; Electrodes; Heating; Nickel; Pulse measurements; Tellurium; Temperature dependence; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Type

conf

DOI

10.1109/IEDM.2006.346731

Filename

4154332