Title :
High Speed Unipolar Switching Resistance RAM (RRAM) Technology
Author :
Hosoi, Y. ; Tamai, Y. ; Ohnishi, T. ; Ishihara, K. ; Shibuya, T. ; Inoue, Y. ; Yamazaki, S. ; Nakano, T. ; Ohnishi, S. ; Awaya, N. ; Inoue, I.H. ; Shima, H. ; Akinaga, H. ; Takagi, H. ; Akoh, H. ; Tokura, Y.
Author_Institution :
Adv. Mater. Res. Labs., Sharp Corp., Fukuyama
Abstract :
We have successfully achieved high speed (~50 ns) unipolar operation in RRAM devices comprised of titanium oxynitride (TiON) combined with a control resistor connected in series. For unipolar switching, programming and erasing pulses can be the same width, typically, a few tens of nano-seconds. This enables high speed and high density cross-point RRAM memory arrays. In addition, we demonstrate how switching characteristics can be controlled by a series resistor
Keywords :
random-access storage; titanium compounds; TiON; high speed unipolar switching resistance RAM technology; series resistor; Electrodes; Industrial control; Laboratories; Materials science and technology; Random access memory; Read-write memory; Resistors; Space vector pulse width modulation; Threshold voltage; Tin;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346732
