Modeling Study of InSb Thin Film For Advanced III-V MOSFET Applications

Band structure of III-V material InSb thin films is calculated using empirical pseudopotential method (EPM). Contrary to the predictions by simple effective mass methods, our calculation predicts that the Gamma valley (with the smallest isotropic bulk effective mass) in InSb remains the lowest lying conduction valley despite size quantization effects in the presence of competing L and Delta valleys which have larger quantization mass. Based on EPM, we computed the important electronic parameters (effective mass, valley minima) of InSb thin film as a function of film thicknesses. Our calculations reveal that the ´effective mass´ of Gamma valley electrons increases with the scaling down of film thickness. We then studied the transport of InSb thin film using non-equilibrium Green´s function. The calculation reveals that InSb is comparable but not superior to Si as channel material of ultra-thin body double gate n-MOSFET in the ballistic limit of these devices