• DocumentCode
    2389368
  • Title

    Three-Dimensional Full-Band Simulations of Si Nanowire Transistors

  • Author

    Luisier, Mathieu ; Schenk, Andreas ; Fichtner, Wolfgang

  • Author_Institution
    Integrated Syst. Lab., ETH Zurich
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper the current characteristics of Si triple-gate nanowire transistors are simulated for different channel orientations. The full-band properties of Si are taken into account via the semi-empirical sp3d5s* tight-binding method. The 3D electrostatic potential is solved self-consistently with the device charge density. This allows the treatment of more realistic transistor structures with rough semiconductor-oxide interfaces along the channel
  • Keywords
    elemental semiconductors; field effect transistors; nanowires; silicon; 3D electrostatic potential; 3D full-band simulations; Si; device charge density; nanowire transistors; semiempirical tight-binding method; Atomic layer deposition; Current density; Electrostatics; FETs; MOSFETs; Poisson equations; Rough surfaces; Slabs; Surface roughness; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0438-X
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346737
  • Filename
    4154338
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2389368