DocumentCode :
2389392
Title :
A Fully Integrated and High Linearity UWB LNA Implemented with Current-Reused Technique and Using Single-Biasing Voltage
Author :
Yang, Chin-Lung ; Hsieh, Wei-Lin ; Chiang, Yi-Chyun
Author_Institution :
Chang Gimg Univ., Taoyuan
fYear :
2007
fDate :
8-10 Oct. 2007
Firstpage :
94
Lastpage :
97
Abstract :
A fully integrated ultra-wideband (UWB) low-noise amplifier (LNA) operating in the 7.2-9.1 GHz frequency range is presented. The LNA is constructed in self-biased and current-reused configuration to eliminate the external supply voltage applied in gate to decrease the complexity of bias circuitry. A shunt-shunt feedback network is not only used to archive self-biased architecture and neutralize the miller effect, but also increase the linearity and bandwidth of the amplifier. A prototype was designed and fabricated in a TSMC 0.18-mum technology to demonstrate the proposed LNA circuit. The measurements of the prototype show the performances in the design band about 10 dB power gain, 3.9 dB noise figure, 2-dBm input-referred third-order intercept point (IIP3) and drawing 9 mA from a 1.8 V power supply.
Keywords :
low noise amplifiers; bias circuitry; current-reused configuration; frequency 7.2 GHz to 9.1 GHz; fully integrated ultrawideband low-noise amplifier; self-biased architecture; shunt-shunt feedback network; Bandwidth; Circuits; Feedback; Frequency; Linearity; Low-noise amplifiers; Power measurement; Prototypes; Ultra wideband technology; Voltage; CMOS; low-noise amplifier (LNA); miller effect; shunt-shunt feedback; ultra-wideband (UWB);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wireless Technologies, 2007 European Conference on
Conference_Location :
Munich
Print_ISBN :
978-2-87487-003-3
Type :
conf
DOI :
10.1109/ECWT.2007.4403954
Filename :
4403954
Link To Document :
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