Title :
A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters
Author :
Pourfath, M. ; Kosina, H. ; Selberherr, S.
Author_Institution :
TU, Wien
Abstract :
The performance of carbon nanotube field-effect transistors has been studied based on the non-equilibrium Green´s function formalism. The effects of elastic and inelastic scattering and the impact of parameters, such as electron-phonon coupling strength and phonon energy, on the device performance are analyzed. The effect of scaling of the source-gate spacer, drain-gate spacer, and gate length is studied. The results for devices with different barrier heights at the metal-CNT interface are discussed
Keywords :
Green´s function methods; S-parameters; carbon nanotubes; field effect transistors; carbon nanotube field-effect transistors; drain-gate spacer; elastic scattering; electron-phonon coupling strength; gate length; inelastic scattering; interface barrier; metal-CNT interface; nonequilibrium Green function formalism; phonon energy; scattering parameters; source-gate spacer; CNTFETs; Carbon nanotubes; Charge carrier processes; Electrons; Equations; Green´s function methods; Hafnium oxide; MOSFETs; Phonons; Scattering parameters;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346739
