Title :
Quantum, Power, and Compound Semiconductor Devices - III-V FETs for Logic: Lasers and Light Emitters in Si and III-V´s
Keywords :
FETs; Gallium arsenide; Gallium nitride; High K dielectric materials; III-V semiconductor materials; Light emitting diodes; Logic devices; Power lasers; Semiconductor devices; Semiconductor lasers;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
DOI :
10.1109/IEDM.2006.346741
