• DocumentCode
    23895
  • Title

    Simulating the Electrical Characteristics of Organic TFTs Prepared by Vacuum Processing

  • Author

    Taylor, Dawn M. ; Williams, Albert ; Patchett, Eifion R. ; Abbas, Gamal A. ; Ziqian Ding ; Assender, Hazel E. ; Morrison, John J. ; Yeates, Stephen G.

  • Author_Institution
    Sch. of Electron. Eng., Bangor Univ., Bangor, UK
  • Volume
    9
  • Issue
    11
  • fYear
    2013
  • fDate
    Nov. 2013
  • Firstpage
    877
  • Lastpage
    882
  • Abstract
    An all-vacuum evaporated approach to the roll-to-roll (R2R) fabrication of organic electronic circuits is being developed for potential applications in, for example, display backplanes and integrated security tagging for packaging. As part of an on-going development process, we are now addressing the question of circuit design and simulation. Here we describe the first step in this process, namely the extraction of parameters from experimentally-obtained output and transfer characteristics of vacuum produced, thin film transistors based on the organic semiconductors pentacene and dinaphtho[2,3-b:2´3´-f]thieno[3,2-b]thiophene (DNTT). For this we use Silvaco´s Universal Thin Film Transistor (UOTFT) Model (Level=37) so that the extracted parameters may be used directly with Silvaco´s Gateway circuit simulation software.
  • Keywords
    circuit simulation; electronics packaging; network synthesis; organic compounds; thin film transistors; vacuum deposition; DNTT; R2R fabrication; Silvaco gateway circuit simulation software; Silvaco universal thin film transistor model; UOTFT model; all-vacuum evaporated approach; circuit design; dinaphtho[2,3-b:2´3´-f]thieno[3,2-b]thiophene; display backplane; integrated security tagging; organic TFT; organic electronic circuit; organic semiconductor pentacene; packaging; parameter extraction; roll-to-roll fabrication; vacuum deposition; vacuum processing; Fabrication; Insulators; Logic gates; Organic thin film transistors; Pentacene; Device simulation; organic electronics; thin film transistors; vacuum-deposition;
  • fLanguage
    English
  • Journal_Title
    Display Technology, Journal of
  • Publisher
    ieee
  • ISSN
    1551-319X
  • Type

    jour

  • DOI
    10.1109/JDT.2013.2255023
  • Filename
    6502749