Title :
Self-Aligned n- and p-channel GaAs MOSFETs on Undoped and P-type Substrates Using HfO2 and Silicon Interface Passivation Layer
Author :
Ok, Injo ; Kim, H. ; Zhang, M. ; Lee, T. ; Zhu, F. ; Yu, L. ; Koveshnikov, S. ; Tsai, W. ; Tokranov, V. ; Yakimov, M. ; Oktyabrsky, S. ; Lee, Jack C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
Abstract :
In this work, using Si interface passivation layer (IPL) we present the electrical characteristics of TaN/HfO2/GaAs both p-and n-MOSFET made on GaAs substrates with excellent electrical and reliability characteristics, thin EOT (~2.3-3.0nm), low frequency dispersion (< 5%) and high maximum mobility (1213 cm2/V-s) with high temperature PMA for n-MOSFET on undoped GaAs. Good inversion behavior with low Dit on lightly doped p-type GaAs has been obtained. P-channel GaAs high-k MOSFETs with excellent peak mobility have also been demonstrated
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; hafnium compounds; passivation; semiconductor doping; silicon; tantalum compounds; TaN-HfO2-GaAs; interface passivation layer; p-type substrates; self-aligned n-channel MOSFET; self-aligned p-channel MOSFET; undoped substrates; Electric variables; Frequency; Gallium arsenide; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Passivation; Silicon; Temperature;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346742
