Reversible switching of an optical gate based on Si rib waveguides with a Ge2Sb2Te5 thin film

Author

Tanaka, D. ; Ikuma, Y. ; Toyosaki, T. ; Tsuda, H. ; Shoji, Y. ; Kintaka, K. ; Kawashima, H. ; Kuwahara, M. ; Wang, X.

Author_Institution

Grad. Sch. of Sci. & Technol., Keio Univ., Yokohama, Japan

fYear

2011

fDate

17-19 June 2011

Firstpage

147

Lastpage

149

Abstract

Reversible switching of an optical gate based on Si rib waveguides with a Ge₂Sb₂Te₅ thin film is reported. We demonstrated four cycles of switching by pulsed laser irradiation. The average extinction ratios of each switching event were 9.1, 10.7, 11.6 and 11.7 dB, respectively. The extinction ratio of this optical gate was more than 5.9 dB over the wide wavelength range from 1525 nm to 1600 nm.

Keywords

antimony compounds; germanium compounds; optical films; optical logic; optical switches; optical waveguides; phase change materials; rib waveguides; silicon; Ge₂Sb₂Te₅; Si; average extinction ratios; optical gate; phase-change material; pulsed laser irradiation; reversible switching; silicon rib waveguides; thin film; wavelength 1525 nm to 1600 nm; Logic gates; Optical device fabrication; Optical films; Optical switches; Optical waveguides; Silicon; optical switch; phase change material; rib waveguide; silicon on insulator;

fLanguage

English

Publisher

ieee

Conference_Titel

Access Spaces (ISAS), 2011 1st International Symposium on

Conference_Location

Yokohama

Print_ISBN

978-1-4577-0716-2

Electronic_ISBN

978-1-4577-0715-5

Type

conf

DOI

10.1109/ISAS.2011.5960937

Filename

5960937