Title :
Reversible switching of an optical gate based on Si rib waveguides with a Ge2Sb2Te5 thin film
Author :
Tanaka, D. ; Ikuma, Y. ; Toyosaki, T. ; Tsuda, H. ; Shoji, Y. ; Kintaka, K. ; Kawashima, H. ; Kuwahara, M. ; Wang, X.
Author_Institution :
Grad. Sch. of Sci. & Technol., Keio Univ., Yokohama, Japan
Abstract :
Reversible switching of an optical gate based on Si rib waveguides with a Ge2Sb2Te5 thin film is reported. We demonstrated four cycles of switching by pulsed laser irradiation. The average extinction ratios of each switching event were 9.1, 10.7, 11.6 and 11.7 dB, respectively. The extinction ratio of this optical gate was more than 5.9 dB over the wide wavelength range from 1525 nm to 1600 nm.
Keywords :
antimony compounds; germanium compounds; optical films; optical logic; optical switches; optical waveguides; phase change materials; rib waveguides; silicon; Ge2Sb2Te5; Si; average extinction ratios; optical gate; phase-change material; pulsed laser irradiation; reversible switching; silicon rib waveguides; thin film; wavelength 1525 nm to 1600 nm; Logic gates; Optical device fabrication; Optical films; Optical switches; Optical waveguides; Silicon; optical switch; phase change material; rib waveguide; silicon on insulator;
Conference_Titel :
Access Spaces (ISAS), 2011 1st International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4577-0716-2
Electronic_ISBN :
978-1-4577-0715-5
DOI :
10.1109/ISAS.2011.5960937
