Novel Nickel-Alloy Silicides for Source/Drain Contact Resistance Reduction in N-Channel Multiple-Gate Transistors with Sub-35nm Gate Length

Author

Lee, Rinus T P ; Liow, Tsung-Yang ; Tan, Kian-Ming ; Lim, Andy Eu-Jin ; Wong, Hoong-Shing ; Lim, Poh-Chong ; Lai, Doreen M Y ; Lo, Guo-Qiang ; Tung, Chih-Hang ; Samudra, Ganesh ; Chi, Dong-Zhi ; Yeo, Yee-Chia

Author_Institution

Dept .of Electr. & Comput. Eng., Nat. Univ. of Singapore

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

In this work, we examined the Schottky-barrier height modulation of NiSi by the incorporation of aluminum (Al), titanium (Ti), erbium (Er), and ytterbium (Yb) in NiSi to form different NiSi-alloys. Among the NiSi-alloy candidates investigated, it was found that the NiAl-alloy silicide provides the most effective Schottky-barrier height lowering (~250 meV) on n-Si(001) substrates. Integration of NiAl-alloy silicides as the source and drain (S/D) silicide material for multiple-gate transistors (MuGFETs) was explored, and shown to deliver a drive current IDsat enhancement of 34% compared to MuGFETs employing NiSi S/D. We further showed that the novel NiAl-alloy silicidation process is compatible with lattice-mismatched silicon-carbon (SiC) S/D stressors. NiAl-alloy silicide is therefore a promising S/D silicide material for reducing the high parasitic series resistance in narrow fin MuGFETs for enhanced device performance

Keywords

MOSFET; Schottky barriers; aluminium compounds; contact resistance; erbium compounds; nickel compounds; silicon; titanium compounds; ytterbium compounds; 35 nm; N-channel multiple-gate transistors; NiSi-Al; NiSi-Er; NiSi-Ti; NiSi-Yb; S/D silicide material; Schottky-barrier height modulation; Si(001) substrates; contact resistance reduction; drive current enhancement; enhanced device performance; lattice-mismatched silicon-carbon (SiC) S/D stressors; narrow fin MuGFET; parasitic series resistance; silicidation process; Aluminum; Argon; Contact resistance; Erbium; Microelectronics; Nickel alloys; Silicidation; Silicides; Silicon carbide; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346915

Filename

4154350