• DocumentCode
    2390079
  • Title

    Dielectric layers for RF-MEMS switches: Design and study of appropriate structures preventing electrostatic charging

  • Author

    Makasheva, K. ; Despax, B. ; Boudou, L. ; Teyssedre, G.

  • Author_Institution
    Lab. Plasma et Conversion d´´Energie, Univ. de Toulouse, Narbonne, France
  • fYear
    2011
  • fDate
    28-31 Aug. 2011
  • Firstpage
    73
  • Lastpage
    74
  • Abstract
    Both multi-layer structures with discrete levels and with continuous ones represent structural and dielectric properties that are adapted to prevent the electrostatic charging in the dielectric layer of RF-MEMS capacitive switches. The role of interfaces in the multi-layer with discrete levels for charge evacuation will be the next step in our study.
  • Keywords
    dielectric properties; electrostatics; microswitches; multilayers; RF-MEMS capacitive switches; dielectric layers; electrostatic charging; multilayer structures; Metals; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets (ISE), 2011 14th International Symposium on
  • Conference_Location
    Montpellier
  • ISSN
    2153-3253
  • Print_ISBN
    978-1-4577-1023-0
  • Type

    conf

  • DOI
    10.1109/ISE.2011.6084988
  • Filename
    6084988
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2390079