DocumentCode
2390190
Title
Time to breakdown and voltage to breakdown modeling for ultra-thin oxides (Tox<32Å)
Author
Monsieur, F. ; Vincent, E. ; Roy, D. ; Bruyre, S. ; Pananakakis, G. ; Ghibaudo, Gerard
Author_Institution
Central R&D Labs., STMicroelectronics, Crolles, France
fYear
2001
fDate
2001
Firstpage
20
Lastpage
25
Abstract
This paper presents reliability results related to ultra-thin oxides (20Å< Tox < 32Å). First of all Voltage to Breakdown (Vbd) is evidenced to linearly depend on the oxide thickness. Moreover, its acceleration factor is found independent of temperature and oxide thickness. Consequently, an empirical model is proposed for the voltage to breakdown dependencies. This model can be transposed to the time to breakdown (Tbd) analysis and a good agreement is found for Tbd prediction and experimental observations. Relationship to other literature models is also discussed
Keywords
electric breakdown; reliability; 20 to 32 A; acceleration factor; empirical model; reliability; time-to-breakdown; ultra-thin oxide; voltage-to-breakdown; Acceleration; Breakdown voltage; Capacitors; Electric breakdown; MOS devices; Predictive models; Research and development; Stress; Temperature distribution; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2001. 2001 IEEE International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-7167-4
Type
conf
DOI
10.1109/.2001.993911
Filename
993911
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