Title :
Time to breakdown and voltage to breakdown modeling for ultra-thin oxides (Tox<32Å)
Author :
Monsieur, F. ; Vincent, E. ; Roy, D. ; Bruyre, S. ; Pananakakis, G. ; Ghibaudo, Gerard
Author_Institution :
Central R&D Labs., STMicroelectronics, Crolles, France
Abstract :
This paper presents reliability results related to ultra-thin oxides (20Å< Tox < 32Å). First of all Voltage to Breakdown (Vbd) is evidenced to linearly depend on the oxide thickness. Moreover, its acceleration factor is found independent of temperature and oxide thickness. Consequently, an empirical model is proposed for the voltage to breakdown dependencies. This model can be transposed to the time to breakdown (Tbd) analysis and a good agreement is found for Tbd prediction and experimental observations. Relationship to other literature models is also discussed
Keywords :
electric breakdown; reliability; 20 to 32 A; acceleration factor; empirical model; reliability; time-to-breakdown; ultra-thin oxide; voltage-to-breakdown; Acceleration; Breakdown voltage; Capacitors; Electric breakdown; MOS devices; Predictive models; Research and development; Stress; Temperature distribution; Tunneling;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2001. 2001 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-7167-4
DOI :
10.1109/.2001.993911
