Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs

Author

Krishnamohan, Tejas ; Jungemann, Christoph ; Kim, Donghyun ; Ungersboeck, Enzo ; Selberherr, Siegfried ; Wong, Philip ; Nishi, Yoshio ; Saraswat, Krishna

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

Using the non-local empirical pseudopotential method (bandstructure), full-band Monte-Carlo simulations (transport), 1D Poisson-Schrodinger (electrostatics) and detailed band-to-band-tunneling (BTBT) (including bandstructure and quantum effects) simulations, the effect of uniaxial- and biaxial-strain, band-structure, mobility, effective masses, density of states, channel orientation and high-field transport on the drive current, off-state leakage and switching delay in nano-scale, Si, SiGe and Ge, p-MOS DGFETs is thoroughly and systematically investigated

Keywords

Ge-Si alloys; MOSFET; Monte Carlo methods; Poisson equation; Schrodinger equation; band structure; elemental semiconductors; germanium; pseudopotential methods; semiconductor device models; silicon; 1D Poisson Schrodinger; SiGe; band structure; band to band tunneling; bandstructure; biaxial strain; channel orientation; density of states; double gate p-MOSFET; drive current; effective masses; electrostatics; full band Monte Carlo simulations; high field transport; mobility; nanoscale; off state leakage; pseudopotential method; quantum effects; switching delay; uniaxial strain; Capacitive sensors; Compressive stress; Delay; Effective mass; Germanium silicon alloys; MOSFET circuits; Photonic band gap; Silicon germanium; Tensile stress; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346938

Filename

4154373