DocumentCode
2390335
Title
Isothermal EM test development for Cu /oxide single damascene interconnect
Author
Leong, Andrew Yap Kin
Author_Institution
Reliability Engineering, Chartered Semiconductor Manufacturing
fYear
2001
fDate
15-18 Oct. 2001
Firstpage
63
Lastpage
66
Abstract
Isothermal (ISOT) EM offers a fast method to evaluate metal EM degradation rate and is a promising tool to reduce process development cycle time leading to timely and successful qualification. In this study, we report preliminary results on developing ISOT method for single damascene Cu/oxide interconnect scheme. We observed statistics of failure to obey lognormal distribution with reasonable sigma at various temperatures. We observed a crossover temperature beyond which failure location has changed from "random" along the line to end of line
Keywords
Circuit testing; Current density; Electrical resistance measurement; Integrated circuit interconnections; Isothermal processes; System testing; Temperature distribution; Temperature measurement; Thermal resistance; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2001. 2001 IEEE International
Conference_Location
Lake Tahoe, CA, USA
Print_ISBN
0-7803-7167-4
Type
conf
DOI
10.1109/IRWS.2001.993919
Filename
993919
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