DocumentCode
2390371
Title
Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs
Author
Palestri, P. ; Clerc, R. ; Esseni, D. ; Lucci, L. ; Selmi, L.
Author_Institution
DIEGM, Udine Univ.
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
This paper examines, by means of multi-subband-Monte-Carlo (MSMC) simulations, the prediction of the well known compact formula for back-scattering in nanoMOSFETs, analyzing the effect of carrier degeneracy and complex scattering mechanisms on the back-scattering. The paper also addresses the definition of an appropriate mean-free-path and its relationship to the low-field mobility
Keywords
MOSFET; carrier mobility; nanoelectronics; semiconductor device models; MSMC; backscattering; carrier degeneracy; complex scattering; degenerated quasi ballistic; kT layer; low field mobility; mean free path; multisubband Monte Carlo; nanoMOSFET; Acoustic scattering; Boundary conditions; Computational modeling; MOSFETs; Optical scattering; Particle scattering; Phonons; Predictive models; Reservoirs; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346940
Filename
4154375
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