DocumentCode
2390402
Title
Electromigration current limit of high speed SiGe bipolar transistors influenced by device self-heating
Author
Brelsford, Kevin ; Rieh, Jae-Sung ; Wang, Ping-Chuan ; Freeman, Greg
Author_Institution
IBM Microelectron., Hopewell Junction, NY, USA
fYear
2001
fDate
2001
Firstpage
78
Lastpage
82
Abstract
In this paper, an overview of the metal electromigration current limit of bipolar transistors is presented in which the device self-heating is taken into account, followed by related design considerations. In this evaluation, we use HBTs processed using IBM´s 0.18 mum SiGe BiCMOS technology. This technology was selected to demonstrate the necessity of these studies to high-speed communication circuit designs
Keywords
Ge-Si alloys; electromigration; heterojunction bipolar transistors; semiconductor materials; 0.18 micron; BiCMOS technology; SiGe; SiGe heterojunction bipolar transistor; electromigration current limit; high-speed communication circuit design; self-heating; Bipolar transistors; Current density; Electromigration; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit interconnections; Microelectronics; Silicon germanium; Temperature sensors; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2001. 2001 IEEE International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-7167-4
Type
conf
DOI
10.1109/.2001.993922
Filename
993922
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