DocumentCode
2390438
Title
Solid State and Nanoelectronic Devices - SONOS and Charge-Trapping Memories
fYear
2006
fDate
11-13 Dec. 2006
Abstract
Summary form only given on above titled article.
Keywords
Conducting materials; Gallium nitride; Impurities; Inorganic materials; MONOS devices; Nanoscale devices; National electric code; SONOS devices; Solid state circuits; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Type
conf
DOI
10.1109/IEDM.2006.346944
Filename
4154379
Link To Document