Title :
Solid State and Nanoelectronic Devices - SONOS and Charge-Trapping Memories
Abstract :
Summary form only given on above titled article.
Keywords :
Conducting materials; Gallium nitride; Impurities; Inorganic materials; MONOS devices; Nanoscale devices; National electric code; SONOS devices; Solid state circuits; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
DOI :
10.1109/IEDM.2006.346944