DocumentCode :
2390438
Title :
Solid State and Nanoelectronic Devices - SONOS and Charge-Trapping Memories
fYear :
2006
fDate :
11-13 Dec. 2006
Abstract :
Summary form only given on above titled article.
Keywords :
Conducting materials; Gallium nitride; Impurities; Inorganic materials; MONOS devices; Nanoscale devices; National electric code; SONOS devices; Solid state circuits; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Type :
conf
DOI :
10.1109/IEDM.2006.346944
Filename :
4154379
Link To Document :
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