On the nature of ultra-thin gate oxide degradation during pulse stressing of nMOSCAPs

Author

Knowlton, William B. ; Kumar, Santosh ; Caldwell, Theodora ; Gomez, Jose J. ; Cheek, Betsy

Author_Institution

Dept. of Electr. & Comput. Eng., Boise State Univ., ID, USA

fYear

2001

fDate

2001

Firstpage

87

Lastpage

88

Abstract

Preliminary Pulse (dynamic) stress testing (PVS) results performed in accumulation indicate that degradation and breakdown mechanisms occur such as stress induced leakage current (SILC) and hard breakdown (HBD) as previously reported. Additional degradation and breakdown mechanisms due to PVS were observed for the first time such as soft breakdown (SBD), limited hard breakdown (LHBD) and moderate breakdown (MBD). Finally, post-PVS induced LHBD I-V measurements show the leakage current in accumulation is more than 5 orders of magnitude greater than in inversion at similar voltages

Keywords

MOS capacitors; leakage currents; semiconductor device breakdown; I-V characteristics; hard breakdown; limited hard breakdown; moderate breakdown; nMOSCAP; pulse voltage stress; soft breakdown; stress induced leakage current; ultra-thin gate oxide degradation; Breakdown voltage; Capacitors; Current measurement; Degradation; Electric breakdown; Leakage current; Performance evaluation; Random access memory; Semiconductor device breakdown; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2001. 2001 IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-7167-4

Type

conf

DOI

10.1109/.2001.993924

Filename

993924