Title :
Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and Si3N4/SiO2 tunneling stack
Author :
Wang, Y.Q. ; Gao, D.Y. ; Hwang, W.S. ; Shen, C. ; Zhang, G. ; Samudra, G. ; Yeo, Y.C. ; Yoo, W.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore
Abstract :
A Si3N4/SiO2 double-tunneling layer is incorporated in a MONOS memory device structure with high-k HfO 2 charge storage layer for NAND-type memory application. Fast erasure of charges trapped in the high-k layer is enabled by enhanced hole current, accomplishing a large memory window of 2.9 V with electrical stress at 17.5 V for 100 (as and at -18 V for 5 ms. Incorporation of 1.6-1.8 nm thick Si3N4 in place of a part of the SiO2 tunneling layer resulted in fast program and erase (P/E) speed and small Vth shift over 104 endurance cycles
Keywords :
hafnium compounds; semiconductor device reliability; semiconductor storage; silicon compounds; -18 V; 1.6 to 1.8 nm; 100 mus; 17.5 V; 2.9 V; 5 ms; HfO2; MONOS type memory; Si3N4-SiO2; charge storage layer; fast erasure; high-k trapping layer; hole current; reliability; tunneling stack; Aluminum oxide; Annealing; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MONOS devices; Material storage; Sputtering; Substrates; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346948
