DocumentCode
2390528
Title
Through silicon vias as enablers for 3D systems
Author
Jung, Erik ; Ostmann, A. ; Ramm, P. ; Wolf, J. ; Toepper, M. ; Wiemer, M.
Author_Institution
Fraunhofer IZM, Berlin
fYear
2008
fDate
9-11 April 2008
Firstpage
119
Lastpage
122
Abstract
This special session on 3D TSVpsilas will highlight some of the fabrication processes and used technologies to create vias from the frontside of an active circuit to its backside and potential implementation solutions to form complex systems leveraging these novel possibilities. General techniques for via formation are discussed as well as advanced integration solutions leveraging the power of 3D TSVpsilas.
Keywords
elemental semiconductors; semiconductor industry; silicon; 3D systems; Si; active circuit frontside; complex systems; enablers; through silicon vias; Circuits; Dielectrics and electrical insulation; Filling; Micromechanical devices; Radio frequency; Routing; Semiconductor materials; Silicon; Substrates; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Test, Integration and Packaging of MEMS/MOEMS, 2008. MEMS/MOEMS 2008. Symposium on
Conference_Location
Nice
Print_ISBN
978-2-35500-006-5
Type
conf
DOI
10.1109/DTIP.2008.4752965
Filename
4752965
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