DocumentCode
2390534
Title
Novel Charge Trap Devices with NCBO Trap Layers for NVM or Image Sensor
Author
Joo, Kyong-Hee ; Moon, Chang-Rok ; Lee, Sung-Nam ; Wang, Xiofeng ; Yang, Jun Kyu ; Yeo, In-Seok ; Lee, Duckhyung ; Nam, Okhyun ; Chung, U-in ; Moon, Joo Tae ; Ryu, Byung-II
Author_Institution
Process Dev. Team, Samsung Electron. Co. Ltd., Seoul
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
ZnO or AlxGa1-xN charge trap device showed large memory window (>7V) with fast P/E speed (plusmn17 V, 100 (_is) and excellent retention (10-year memory window of 6 V with small charge loss rate; ~l/5 of that of Si3N4). GaN and ZnO trap devices also showed the photo-sensitive programming due to their optoelectronics properties, providing the possibility of developing new type of high performance image sensor (QE ~ 80%)
Keywords
electron traps; gallium compounds; image sensors; optoelectronic devices; zinc compounds; 10 years; 100 mus; 6 V; AlGaN; NCBO trap layers; NVM; ZnO; charge trap devices; image sensor; optoelectronics properties; photo sensitive programming; Conducting materials; Electron traps; Gallium nitride; Image sensors; Moon; Nanocrystals; Nonvolatile memory; Substrates; Tunneling; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346950
Filename
4154385
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