DocumentCode :
2390564
Title :
Technologies for 3D wafer level heterogeneous integration
Author :
Wolf, M.J. ; Ramm, P. ; Klumpp, A. ; Reichl, H.
Author_Institution :
Fraunhofer IZM, Berlin
fYear :
2008
fDate :
9-11 April 2008
Firstpage :
123
Lastpage :
126
Abstract :
3D integration is a fast growing field that encompasses different types of technologies. The paper addresses one of the most promising technology which uses Through Silicon Vias (TSV) for interconnecting stacked devices on wafer level to perform high density interconnects with a good electrical performance at the smallest form factor for 3D architectures. Fraunhofer IZM has developed a post front-end 3D integration process which allows stacking of functional and tested FE-devices e.g. sensors, ASICs on wafer level as well as a technology portfolio for passive silicon interposer with redistribution layers and TSV.
Keywords :
application specific integrated circuits; integrated circuit interconnections; system-in-package; wafer-scale integration; 3D wafer level heterogeneous integration; ASICs; high-density interconnects; passive silicon interposer; redistribution layers; sensors; stacked devices; system-in-package; through silicon vias; CMOS technology; Cost function; Fabrication; Isolation technology; Optimized production technology; Packaging; Silicon; System-on-a-chip; Through-silicon vias; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Test, Integration and Packaging of MEMS/MOEMS, 2008. MEMS/MOEMS 2008. Symposium on
Conference_Location :
Nice
Print_ISBN :
978-2-35500-006-5
Type :
conf
DOI :
10.1109/DTIP.2008.4752966
Filename :
4752966
Link To Document :
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