DocumentCode
2390584
Title
Copper electrodeposition for 3D integration
Author
Beica, Rozalia ; Sharbono, Charles ; Ritzdorf, Tom
Author_Institution
Semitool, Kalispell, MT
fYear
2008
fDate
9-11 April 2008
Firstpage
127
Lastpage
131
Abstract
Two dimensional (2D) integration has been the traditional approach for IC integration. Increasing demands for providing electronic devices with superior performance and functionality in more efficient and compact packages has driven the semiconductor industry to develop more advanced packaging technologies.
Keywords
copper; electrodeposition; filling; integrated circuit interconnections; 3D chip integration; 3D packaging technologies; Cu; IC integration; copper damascene interconnects; copper electrodeposition; fill processes; three-dimensional integration; through silicon via copper; two dimensional integration; wafer design; Consumer electronics; Copper; Electronics industry; Electronics packaging; Integrated circuit packaging; Semiconductor device packaging; Silicon; Stacking; Through-silicon vias; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Test, Integration and Packaging of MEMS/MOEMS, 2008. MEMS/MOEMS 2008. Symposium on
Conference_Location
Nice
Print_ISBN
978-2-35500-006-5
Type
conf
DOI
10.1109/DTIP.2008.4752967
Filename
4752967
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