Doubling or quadrupling MuGFET fin integration scheme with higher pattern fidelity, lower CD variation and higher layout efficiency

Multiple gate field effect transistors (MuGFET) with a fin pitch down to 50nm obtained with 193nm optical lithography and proposed fin quadrupling patterning method are demonstrated. The fins patterned with this technique feature improved CD control and line width roughness. High fin density in combination with Si-SEG that allows merging individual fins outside the spacer region lead to reduction in parasitic source/drain-resistance and 3-fold increase in drive current per surface unit