Title :
Advances in RF MEMS technology
Author :
Pillans, B. ; Rebeiz, G. ; Lee, J.-B.
Author_Institution :
Raytheon Adv. Production Center, Dallas, TX, USA
Abstract :
Applying surface and bulk micromachining techniques to the RF/Microwave regime has taken off over the last 10 years. RF MEMS devices offer a high-performance, low-cost solution to many RF/Microwave applications. This abstract will summarize the present state of RF MEMS passive and active components including performance and reliability data for several types of RF MEMS including switches from Raytheon, Lincoln Labs, Rockwell Scientific and Radant MEMS. In addition, packaging issues and future packaging concepts will be discussed.
Keywords :
inductors; micromachining; microswitches; microwave switches; semiconductor device packaging; semiconductor device reliability; MEMS switches; RF MEMS technology; active components; bulk micromachining; capacitive switches; monolithic integration; ohmic switches; packaging issues; passive components; performance data; reliability data; spiral inductors; surface micromachining; wafer-level packaging; Active inductors; Electrostatic actuators; Geometry; Inductance; Micromachining; Microwave devices; Radio frequency; Radiofrequency microelectromechanical systems; Spirals; Switches;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252353