Advances in RF MEMS technology

Author

Pillans, B. ; Rebeiz, G. ; Lee, J.-B.

Author_Institution

Raytheon Adv. Production Center, Dallas, TX, USA

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

17

Lastpage

20

Abstract

Applying surface and bulk micromachining techniques to the RF/Microwave regime has taken off over the last 10 years. RF MEMS devices offer a high-performance, low-cost solution to many RF/Microwave applications. This abstract will summarize the present state of RF MEMS passive and active components including performance and reliability data for several types of RF MEMS including switches from Raytheon, Lincoln Labs, Rockwell Scientific and Radant MEMS. In addition, packaging issues and future packaging concepts will be discussed.

Keywords

inductors; micromachining; microswitches; microwave switches; semiconductor device packaging; semiconductor device reliability; MEMS switches; RF MEMS technology; active components; bulk micromachining; capacitive switches; monolithic integration; ohmic switches; packaging issues; passive components; performance data; reliability data; spiral inductors; surface micromachining; wafer-level packaging; Active inductors; Electrostatic actuators; Geometry; Inductance; Micromachining; Microwave devices; Radio frequency; Radiofrequency microelectromechanical systems; Spirals; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252353

Filename

1252353