High-Performance and Low-Power CMOS Device Technologies Featuring Metal/High-k Gate Stacks with Uniaxial Strained Silicon Channels on (100) and (110) Substrates

Author

Tateshita, Y. ; Wang, J. ; Nagano, K. ; Hirano, T. ; Miyanami, Y. ; Ikuta, T. ; Kataoka, T. ; Kikuchi, Y. ; Yamaguchi, S. ; Ando, T. ; Tai, K. ; Matsumoto, R. ; Fujita, S. ; Yamane, C. ; Yamamoto, R. ; Kanda, S. ; Kugimiya, K. ; Kimura, T. ; Ohchi, T. ; Y

Author_Institution

Semicond. Technol. Dev. Group, SONY Corp., Atsugi

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

CMOS technologies using metal/high-k damascene gate stacks with uniaxial strained silicon channels were developed. Gate electrodes of HfSi_x and TiN were applied to nFETs and pFETs, respectively. TiN/HfO₂ damascene gate stacks and epitaxial SiGe source/drains were successfully integrated for the first time. As a result, drive currents of 1050 and 710 muA/mum at Vdd=l V, Ioff=100 nA/um and T_inv=1.6 nm were obtained for the nFETs and pFETs. The further integration of pFETs on (110) substrates contributed to a higher drive current of 830 muA/mum. These performances were realized under low gate leakage currents of 0.03 A/cm² and below

Keywords

CMOS integrated circuits; hafnium compounds; low-power electronics; titanium compounds; 1 V; CMOS device; HfSi; TiN-HfO₂; damascene gate stacks; high performance; low power; metal/high-k gate stacks; nFET; pFET; uniaxial strained silicon channels; CMOS technology; Electrodes; Germanium silicon alloys; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; Silicon germanium; Substrates; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346959

Filename

4154394