Progress in GaAs metamorphic HEMT technology for microwave applications

Author

Smith, P.M. ; Dugas, D. ; Chu, K. ; Nichols, K. ; Duh, K.G. ; Fisher, J. ; Mt Pleasant, L. ; Xu, D. ; Gunter, L. ; Vera, A. ; Lender, R. ; Meharry, D.

Author_Institution

BAE Syst., Nashua, NH, USA

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

21

Lastpage

24

Abstract

This paper reviews recent progress in the development of GaAs metamorphic HEMT (MHEMT) technology for microwave applications. Commercialization has begun, while efforts to further improve performance, manufacturability and reliability continue. We also report the first multi-watt MHEMT MMIC power amplifiers, demonstrating up to 3.2W output power and record power-added efficiency (PAE) at Ka-band.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium arsenide; integrated circuit reliability; reviews; 3.2 W; GaAs; Ka-band; MMIC power amplifiers; commercialization; low noise amplifiers; manufacturability; metamorphic HEMT technology; microwave applications; performance; power-added efficiency; reliability; Frequency; Gallium arsenide; HEMTs; Indium phosphide; MMICs; MODFETs; Manufacturing; Microwave technology; Power amplifiers; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252354

Filename

1252354