Title :
Comprehensive Study on Injection Velocity Enhancement in Dopant-Segregated Schottky MOSFETs
Author :
Kinoshita, A. ; Kinoshita, T. ; Nishi, Y. ; Uchida, K. ; Toriyama, S. ; Hasumi, R. ; Koga, J.
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama
Abstract :
The carrier transport in dopant-segregated Schottky (DSS) and conventional MOSFETs was thoroughly investigated in terms of carrier injection velocity, vinj. It was found that vinj enhancement associated with the velocity overshoot enhances the current drivability in DSS, in addition to the reduction of parasitic resistance. A physical-based model was newly developed to explain the velocity overshoot behavior and reproduced the experimental data very well. Moreover, a novel type of DSS FinFET to take full advantage of the velocity overshoot was proposed and demonstrated as a primary study
Keywords :
MOSFET; Schottky gate field effect transistors; semiconductor device models; DSS FinFET; carrier injection velocity; carrier transport; dopant-segregated Schottky MOSFET; injection velocity enhancement; parasitic resistance; velocity overshoot; Capacitive sensors; Charge carrier density; Decision support systems; FinFETs; Hot carrier injection; Laboratories; Large scale integration; MOSFETs; Research and development; Semiconductor process modeling;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346963
