Direct conversion receiver RFIC for CDMA-2000

Author

Hafizi, M. ; Feng, S. ; Fu, T.L. ; Ruth, B. ; Schwab, R. ; Schulze, K. ; Karlsen, P. ; Gu, Q. ; Narhi, O. ; Kananen, K. ; Wakeham, C.

Author_Institution

Nokia Mobile Phones, San Diego, CA, USA

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

41

Lastpage

43

Abstract

We report on the successful development of a highly integrated dual-band receiver IC for CDMA-2000 mobile handset applications. The IC was implemented in an advanced SiGe BiCMOS process. It contained all receiver functions including low-noise amplifier, Demodulator, analog baseband filter, variable-gain amplifier, and frequency synthesizer. The receiver RFIC met or exceeded all CDMA 2000 requirements when tested on a handset.

Keywords

3G mobile communication; BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; demodulators; microwave receivers; mobile handsets; transceivers; CDMA receive functions; CDMA-2000 mobile handset; SiGe; advanced BiCMOS process; analog baseband filter; demodulator; direct conversion receiver RFIC; dual-band receiver IC; frequency synthesizer; highly integrated receiver IC; low-noise amplifier; transceiver; variable-gain amplifier; Application specific integrated circuits; Baseband; BiCMOS integrated circuits; Demodulation; Dual band; Germanium silicon alloys; Low-noise amplifiers; Mobile handsets; Radiofrequency integrated circuits; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252358

Filename

1252358