Title :
Direct conversion receiver RFIC for CDMA-2000
Author :
Hafizi, M. ; Feng, S. ; Fu, T.L. ; Ruth, B. ; Schwab, R. ; Schulze, K. ; Karlsen, P. ; Gu, Q. ; Narhi, O. ; Kananen, K. ; Wakeham, C.
Author_Institution :
Nokia Mobile Phones, San Diego, CA, USA
Abstract :
We report on the successful development of a highly integrated dual-band receiver IC for CDMA-2000 mobile handset applications. The IC was implemented in an advanced SiGe BiCMOS process. It contained all receiver functions including low-noise amplifier, Demodulator, analog baseband filter, variable-gain amplifier, and frequency synthesizer. The receiver RFIC met or exceeded all CDMA 2000 requirements when tested on a handset.
Keywords :
3G mobile communication; BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; demodulators; microwave receivers; mobile handsets; transceivers; CDMA receive functions; CDMA-2000 mobile handset; SiGe; advanced BiCMOS process; analog baseband filter; demodulator; direct conversion receiver RFIC; dual-band receiver IC; frequency synthesizer; highly integrated receiver IC; low-noise amplifier; transceiver; variable-gain amplifier; Application specific integrated circuits; Baseband; BiCMOS integrated circuits; Demodulation; Dual band; Germanium silicon alloys; Low-noise amplifiers; Mobile handsets; Radiofrequency integrated circuits; Silicon germanium;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252358
