A 6W Uneven Doherty Power Amplifier in GaN Technology

Author

Markos, A.Z. ; Colantonio, P. ; Giannini, F. ; Giofrè, R. ; Imbimbo, M. ; Kompa, G.

Author_Institution

Univ. of Kassel, Kassel

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

379

Lastpage

382

Abstract

In this paper the design of a 6 W uneven GaN Doherty power amplifier is presented. The Doherty PA is designed to achieve high efficiency for modulated signals with high peak to average power ratio used in modern wireless communication systems. The Doherty amplifier has been designed using two equal sized GaN devices for the Main Class AB and Peaking Class C amplifiers. An uneven power divider is used at the input to deliver more input power to the Peaking amplifier than the Main amplifier. The measured maximum output power of the realised uneven Doherty is 38 dBm with 60% of peak power added efficiency (76% of drain efficiency). The power added (drain) efficiency is higher than 52% (62%) up to 6 dB of back off, or 42% (45%) up to 10 dB of back off.

Keywords

III-V semiconductors; gallium compounds; power amplifiers; power dividers; wide band gap semiconductors; GaN technology; high peak to average power ratio; main class AB amplifiers; modern wireless communication systems; peaking class C amplifiers; power 6 W; uneven Doherty power amplifier; uneven power divider; Gallium nitride; High power amplifiers; Impedance; Linearity; Peak to average power ratio; Power amplifiers; Power dividers; Power generation; Radio frequency; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Technologies, 2007 European Conference on

Conference_Location

Munich

Print_ISBN

978-2-87487-003-3

Type

conf

DOI

10.1109/ECWT.2007.4404026

Filename

4404026