Title :
On the determination of poisson’s ratio of stressed monolayer and bilayer submicron thick films
Author :
Martins, P. ; Malhaire, C. ; Brida, S. ; Barbier, D.
Author_Institution :
CNRS UMR, Villeurbanne
Abstract :
In this paper, the bulge test is used to determine the mechanical properties of very thin dielectric membranes. Commonly, this experimental method permits to determine the residual stress (sigma0) and biaxial Youngpsilas modulus (E/(1- upsi)). Associating square and rectangular membranes with different length to width ratios, the Poissonpsilas ratio (upsi) can also be determined. LPCVD Si3N4 monolayer and Si3N4/SiO2 bilayer membranes, with thicknesses down to 104 nm, have been characterized giving results in agreement with literature for Si3N4, E = 212 plusmn 114 GPa, sigma0 = 420 plusmn 8 and upsi = 0.29.
Keywords :
Poisson ratio; Young´s modulus; chemical vapour deposition; dielectric materials; internal stresses; monolayers; thick films; LPCVD; Poissonpsilas ratio; Si3N4-SiO2; biaxial Youngpsilas modulus; bilayer submicron thick films; bulge test; mechanical properties; rectangular membranes; residual stress; square membranes; stressed monolayer; very thin dielectric membranes; Biomembranes; Dielectrics; Mechanical factors; Mechanical systems; Micromechanical devices; Residual stresses; Shape; Testing; Thick films; Transistors;
Conference_Titel :
Design, Test, Integration and Packaging of MEMS/MOEMS, 2008. MEMS/MOEMS 2008. Symposium on
Conference_Location :
Nice
Print_ISBN :
978-2-35500-006-5
DOI :
10.1109/DTIP.2008.4752983
