Title :
A 3.3V broadband linear power amplifier module for IEEE 802.16e (Wimax) applications using E-mode pHEMT technology
Author :
Chow, Y.H. ; Yong, C.K. ; Lee, Jeyull ; Thor, W.Y. ; Lee, Khuan Y. ; Tan, H.T. ; Liew, Y.Y. ; Khoo, S.H.
Author_Institution :
Avago Technol. Malaysia, Penang
Abstract :
This paper describes, for the first time, the design and realization of a linear power amplifier for the newly-ratified IEEE 802.16e WMAN (WiMax) applications using a proprietary 0.25 um enhancement-mode pHEMT (EpHEMT) technology. When tested using a 10 MHz bandwidth IEEE802.16e signal with 64-QAM modulation, the amplifier exhibits a linear power output of (22.5-23)dBm across the full (3.3-3.8)GHz band with less than 2.5% EVM on a single 3.3 V supply while consuming 420 mA of total current. A 20 dB bypass gain attenuator that is activated by a CMOS-compatible voltage pin is included on-chip. Output power detection is achieved by the use of an on-chip power detector and a bias shutdown voltage shuts down the complete amplifier. At 3.6 V supply tuned to (3.3-3.6)GHz operation, the amplifier outputs 24 dBm of linear output power. The complete module is packaged in a molded chip-on-board (MCOB) 5 mm times 5 mm module.
Keywords :
CMOS logic circuits; WiMax; attenuators; network-on-chip; power amplifiers; quadrature amplitude modulation; wideband amplifiers; CMOS-compatible voltage; IEEE 802.16e; QAM modulation; WiMax; broadband linear power amplifier module; bypass gain attenuator; enhancement-mode pHEMT technology; frequency 10 MHz; molded chip-on-board; on-chip power detector; power detection; voltage 3.3 V; Attenuators; Bandwidth; Broadband amplifiers; Gain; PHEMTs; Power amplifiers; Power generation; Testing; Voltage; WiMAX; Amplifier; Linearity; MMIC; Wimax; pHEMT;
Conference_Titel :
Wireless Technologies, 2007 European Conference on
Conference_Location :
Munich
Print_ISBN :
978-2-87487-003-3
DOI :
10.1109/ECWT.2007.4404028