• DocumentCode
    2390881
  • Title

    High-Efficiency Balanced Switched-Path Monolithic SiGe HBT Power Amplifiers for Wireless Applications

  • Author

    Grebennikov, Andrei ; Sogl, Bernhard ; Herrmann, Helmut ; Roth, Christian ; Thomann, Wolfgang

  • Author_Institution
    Infineon Technol. AG, Neubiberg
  • fYear
    2007
  • fDate
    8-10 Oct. 2007
  • Firstpage
    391
  • Lastpage
    394
  • Abstract
    Modern wireless telecommunication systems require high-efficient, linear, low cost and long talk-time solutions. The proposed novel balanced circuit for power amplifiers provides a high efficiency at maximum as well as backoff output power levels and low sensitivity to load variations. To minimize the quiescent current at low output power levels, an adaptive current-mirror bias circuit can be effectively used. Experimental results for highly efficient, linear, multi-band and multi-mode, two-stage, balanced switched-path SiGe HBT power amplifiers, intended to operate across the DCS 1800, PCS 1900, WCDMA 850/1900/2100 frequency bands, exhibit a peak power-added efficiency of ges50 % at 33 dBm and ges20 % at 16 dBm of output power with a minimum quiescent current of 12 mA.
  • Keywords
    heterojunction bipolar transistors; power amplifiers; radiocommunication; silicon compounds; HBT power amplifiers; SiGe; adaptive current-mirror bias circuit; quiescent current; wireless telecommunication systems; Circuits; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Power amplifiers; Power generation; Silicon germanium; Telecommunication switching; Wireless sensor networks;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless Technologies, 2007 European Conference on
  • Conference_Location
    Munich
  • Print_ISBN
    978-2-87487-003-3
  • Type

    conf

  • DOI
    10.1109/ECWT.2007.4404029
  • Filename
    4404029