DocumentCode
2390888
Title
Laser-Based Defect Localization on Integrated Circuits
Author
Cole, Edward I., Jr.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
The explosion in complexity of modern ICs resulting from reduced feature sizes, circuit density, and sophisticated electrical stimulus has made failure analysis and defect localization extremely difficult. Dense metallization and flip-chip packaging can leave only the backside of the IC available for interrogation. Laser-based methods provide some of the powerful tools analysts depend on to overcome these obstacles
Keywords
failure analysis; flip-chip devices; integrated circuit metallisation; integrated circuit testing; laser materials processing; circuit density; dense metallization; electrical stimulus; failure analysis; feature sizes; flip-chip packaging; integrated circuits; laser-based defect localization; Conductors; Heating; Laser modes; Laser theory; Photoconductivity; Power demand; Silicon; Thermal resistance; Thermoelectricity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0439-8
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346968
Filename
4154403
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