Unique ESD Failure Mechanism in a MuGFET Technology

FinFET devices have been recently reported to show an unprecedented sensitivity to ESD stress. Detailed failure analyses under ESD stress for these devices reveal a uniquely new mechanism that indicates fusing of single fins. This rather unexpected phenomenon is the cause of extremely high ESD sensitivity as determined by the weakest fin. Based on device simulations, thermal properties of the fins´ robustness to ESD are discussed. ESD-robust design of MuGFET circuits is envisioned, if this particular thermal behavior is taken into account for the device design