In-plane bistable nanowire for memory devices

We present a micromechanical device designed to be used as a non-volatile mechanical memory. The structure is composed of a suspended slender nanowire (width: 100 nm, thickness: 430 nm, length: 8 to 30 mum) clamped at both ends. Electrodes are placed on each side of the nanowire to 1) actuate the structure during the data writing and erasing mode and 2) determine its position by measuring the capacitive bridge in the reading mode. The structure is patterned by electron beam lithography on a pre-stressed thermally grown silicon dioxide layer. When later released by plasma etching, the stressed material relaxes and the beam buckles by itself to a position of lower energy. These symmetric bistable Euler beams exhibit two stable deformed. This paper presents the microfabrication process and the analysis of the static buckling of nanowires. Snapping of these nanowires from one stable position to another by mechanical or electrical means will also be discussed.