DocumentCode
2391112
Title
Fully Optimized Cu based process with dedicated cavity etch for 1.75μm and 1.45μm pixel pitch CMOS Image Sensors
Author
Cohen, M. ; Roy, F. ; Herault, D. ; Cazaux, Y. ; Gandolfi, A. ; Reynard, JP ; Cowache, C. ; Bruno, E. ; Girault, T. ; Vaillant, J. ; Barbier, F. ; Sanchez, Y. ; Hotellier, N. ; LeBorgne, O. ; Augier, C. ; Inard, A. ; Jagueneau, T. ; Zinck, C. ; Michailos,
Author_Institution
STMicroelectronics, Crolles
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
An innovative process development for sub-2μm CMOS imager sensors is described, leading to tremendous improvements on main pixel parameters like conversion gain, saturation charge, sensitivity, dark current and noise, A full 3MP demonstrator with 1.75μ pixel pitch and 1.45μm pixel pitch have been successfully designed, fabricated and characterized
Keywords
CMOS image sensors; copper; 1.45 micron; 1.75 micron; CMOS image sensors; Cu; cavity etch; dark current; pixel pitch; saturation charge; CMOS image sensors; CMOS process; Charge-coupled image sensors; Etching; Implants; Optical crosstalk; Optical filters; Photodiodes; Pixel; Sensor phenomena and characterization;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346976
Filename
4154411
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