Numerical analysis of compound semiconductor RF devices

Author

Palankovski, V. ; Wagner, S. ; Selberherr, S.

Author_Institution

Inst. fur Microelectron., Technische Univ. Wien, Austria

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

107

Lastpage

110

Abstract

An overview of heterostructure RF device simulation for industrial applications based on III-V compound semiconductors has been given in (V. Palankovski et al., GaAs IC Symp. Tech. Dig., p.117-120, 2000). Here, we present the most recent achievements in numerical simulation for industrial heterostructure devices, together with relevant industrial applications (GaAs, InP and SiGe HBTs).

Keywords

Ge-Si alloys; III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; semiconductor materials; semiconductor process modelling; technology CAD (electronics); GaAs; HBT; III-V compound semiconductors; InP; SiGe; TCAD tools; compound semiconductor RF devices; industrial heterostructure devices; semiconductor device numerical analysis; technology computer-aided design; Circuit simulation; Composite materials; Computational modeling; Doping; Gallium arsenide; Germanium silicon alloys; Numerical analysis; Radio frequency; Semiconductor device noise; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252374

Filename

1252374