A physically based analytical model of the collector charge of III-V heterojunction bipolar transistors

Author

van der Toorn, R. ; Paasschens, J.C.J. ; Havens, R.J.

Author_Institution

Philips Res. Labs., Eindhoven, Netherlands

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

111

Lastpage

114

Abstract

We present a physically based, analytical model of the electric field, charge and capacitance in the collector of a III-V HBT. The model consistently takes into account the decrease of electron drift velocity versus electric field at high fields. We achieve excellent prediction of collector-base capacitance as a function of collector-base voltage and current in the regime of partial depletion of the collector, while the only fitting needed is determination of mobility parameters from drift-velocity data.

Keywords

III-V semiconductors; electron mobility; heterojunction bipolar transistors; high field effects; semiconductor device models; GaAs; HBT physically based analytical model; III-V heterojunction bipolar transistors; collector charge; collector electric field effects; collector partial depletion; collector-base capacitance; compact modeling; electron drift velocity; electron mobility; high field effects; Analytical models; Capacitance; Differential equations; Electron mobility; Heterojunction bipolar transistors; III-V semiconductor materials; Laboratories; Poisson equations; Semiconductor process modeling; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252375

Filename

1252375