Hole transport in plasma polymerized organosilicon films

Author

Sielski, Jan ; Kryszewski, Marian

Author_Institution

Polish Acad. of Sci., Lodz, Poland

fYear

1991

fDate

25-27 Sep 1991

Firstpage

11

Lastpage

15

Abstract

Transport of holes in plasma polymerized organosilicon films was investigated. Measurements of electrical conductivity and drift mobility using the time-of-flight (TOF) method were carried out. It was found that a polarization process influenced the transport of holes in pp-HMDSN (plasma-polymerized hexamethyldisilazane). The frozen-in polarization of the sample increases the value of drift mobility. This process is fully reversible and after depolarization the value of drift mobility returns to the previous one (before polarization)

Keywords

dielectric depolarisation; dielectric polarisation; dielectric thin films; electrets; electronic conduction in insulating thin films; polymer films; time of flight spectra; depolarization; drift mobility; electrets; electrical conductivity; hole transport; plasma polymerized organosilicon films; polarization process; time-of-flight method; Amorphous materials; Annealing; Circuits; Conductivity; Current measurement; Plasma measurements; Plasma temperature; Plasma transport processes; Polarization; Polymer films;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrets, 1991. (ISE 7) Proceedings., 7th International Symposium on (Cat. No.91CH3029-6)

Conference_Location

Berlin

Print_ISBN

0-7803-0112-9

Type

conf

DOI

10.1109/ISE.1991.167176

Filename

167176