DocumentCode :
2391203
Title :
On the charge storage and decay mechanism in silicon dioxide
Author :
Olthuis, W. ; Bergveld, P.
Author_Institution :
MESA Res. Inst., Twente Univ., Enschede, Netherlands
fYear :
1991
fDate :
25-27 Sep 1991
Firstpage :
16
Lastpage :
26
Abstract :
A mechanism for both the storage and the decay of charge in a charged silicon dioxide layer is proposed. The oxide layer needs neutral traps (NETs) to obtain stable trapped negative charge, after having been charged, resulting in an electret that can be applied in microphones. The hydrolysis of the silanol groups, followed by charge injection, results in an electrochemical reaction with immobile SiO as one of the reaction products. Decay of the stable charge thus obtained can occur by the clustering of water molecules at inner silanol groups, resulting in a conductive hydrogen bonded network, which eventually leads to the discharge of the electret
Keywords :
electrets; electron traps; hole traps; silicon compounds; H bonded network; H2O molecule clustering; SiO2; charge decay; charge injection; charge storage; electret; electrochemical reaction; hydrolysis; neutral traps; Biomembranes; Conductivity; Electrets; Electron traps; Hydrogen; Manufacturing; Micromachining; Microphones; Polymers; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets, 1991. (ISE 7) Proceedings., 7th International Symposium on (Cat. No.91CH3029-6)
Conference_Location :
Berlin
Print_ISBN :
0-7803-0112-9
Type :
conf
DOI :
10.1109/ISE.1991.167177
Filename :
167177
Link To Document :
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