• DocumentCode
    2391203
  • Title

    On the charge storage and decay mechanism in silicon dioxide

  • Author

    Olthuis, W. ; Bergveld, P.

  • Author_Institution
    MESA Res. Inst., Twente Univ., Enschede, Netherlands
  • fYear
    1991
  • fDate
    25-27 Sep 1991
  • Firstpage
    16
  • Lastpage
    26
  • Abstract
    A mechanism for both the storage and the decay of charge in a charged silicon dioxide layer is proposed. The oxide layer needs neutral traps (NETs) to obtain stable trapped negative charge, after having been charged, resulting in an electret that can be applied in microphones. The hydrolysis of the silanol groups, followed by charge injection, results in an electrochemical reaction with immobile SiO as one of the reaction products. Decay of the stable charge thus obtained can occur by the clustering of water molecules at inner silanol groups, resulting in a conductive hydrogen bonded network, which eventually leads to the discharge of the electret
  • Keywords
    electrets; electron traps; hole traps; silicon compounds; H bonded network; H2O molecule clustering; SiO2; charge decay; charge injection; charge storage; electret; electrochemical reaction; hydrolysis; neutral traps; Biomembranes; Conductivity; Electrets; Electron traps; Hydrogen; Manufacturing; Micromachining; Microphones; Polymers; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1991. (ISE 7) Proceedings., 7th International Symposium on (Cat. No.91CH3029-6)
  • Conference_Location
    Berlin
  • Print_ISBN
    0-7803-0112-9
  • Type

    conf

  • DOI
    10.1109/ISE.1991.167177
  • Filename
    167177